HYDROGEN-BONDING AND DIFFUSION IN CRYSTALLINE SILICON

被引:184
作者
CHANG, KJ [1 ]
CHADI, DJ [1 ]
机构
[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
来源
PHYSICAL REVIEW B | 1989年 / 40卷 / 17期
关键词
D O I
10.1103/PhysRevB.40.11644
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:11644 / 11653
页数:10
相关论文
共 65 条
[1]   MICROSCOPIC MECHANISM OF HYDROGEN PASSIVATION OF ACCEPTOR SHALLOW LEVELS IN SILICON [J].
ASSALI, LVC ;
LEITE, JR .
PHYSICAL REVIEW LETTERS, 1985, 55 (09) :980-982
[2]   ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J].
BARYAM, Y ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW B, 1984, 30 (04) :1844-1852
[3]   DONOR-HYDROGEN COMPLEXES IN PASSIVATED SILICON [J].
BERGMAN, K ;
STAVOLA, M ;
PEARTON, SJ ;
LOPATA, J .
PHYSICAL REVIEW B, 1988, 37 (05) :2770-2773
[4]  
BOYCE JB, 1985, B AM PHYS SOC, V30, P354
[5]   HYDROGEN IN DIAMOND [J].
BRIDDON, P ;
JONES, R ;
LISTER, GMS .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (30) :L1027-L1031
[6]  
BUDA F, 1988, 19TH P INT C PHYS SE, P1159
[7]   HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR [J].
CAPIZZI, M ;
MITTIGA, A .
APPLIED PHYSICS LETTERS, 1987, 50 (14) :918-920
[8]   METASTABILITY OF THE ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS [J].
CHADI, DJ ;
CHANG, KJ .
PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2187-2190
[9]   THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].
CHADI, DJ ;
CHANG, KJ .
PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876
[10]   THEORY OF HYDROGEN PASSIVATION OF SHALLOW-LEVEL DOPANTS IN CRYSTALLINE SILICON [J].
CHANG, KJ ;
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1988, 60 (14) :1422-1425