GETTERING OF METALLIC IMPURITIES FROM PLANAR SILICON DIODES

被引：52

作者：

ING, SW

MORRISON, RE

ALT, LL

ALDRICH, RW

机构：

来源：

关键词：

D O I：

10.1149/1.2425808

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：533 / 537

页数：5

共 8 条

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[4]

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[5] SLIP PATTERNS ON BORON-DOPED SILICON SURFACES [J].

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[6]

QUEISSER HJ, 1961, B AM PHYS SOC, V6, P106

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

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MOLL, JL .

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