CR GETTERING BY NE ION-IMPLANTATION AND THE CORRELATION WITH THE ELECTRICAL ACTIVATION OF IMPLANTED SI IN SEMI-INSULATING GAAS

被引：4
作者：
YAGITA, H
ONUMA, T
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期
关键词：
D O I：
10.1063/1.330529
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1218 / 1220
页数：3
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