TRANSIENT PULSE RESPONSE OF IN0.2GA0.8AS/GAAS MICROCAVITY LASERS

被引：32

作者：

MICHLER, P ^{[1
]}

LOHNER, A ^{[1
]}

RUHLE, WW ^{[1
]}

REINER, G ^{[1
]}

机构：

[1] UNIV ULM,OPTOELEKTR ABT,D-89069 ULM,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 13期

关键词：

D O I：

10.1063/1.113864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the transient emission of two In0.2Ga0.8As/GaAs microcavity laser samples with one and three quantum wells at 20 K following femtosecond optical excitation. The stimulated emission time is faster when the cavity resonance is tuned to shorter wavelengths within the gain spectrum of the quantum well. A larger number of quantum wells makes the dynamical response faster also. The narrowest pulse width observed is 6.8 ps, and the shortest rise time is 1 ps.© 1995 American Institute of Physics.

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页码：1599 / 1601

页数：3

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