DOUBLY AND TRIPLY CHARGED ION PRODUCTION IN O+-SI SURFACE SCATTERING

被引：11
作者：
HIRD, B
ARMSTRONG, RA
GAUTHIER, P
机构：
[1] Ottawa-Carleton Institute for Physics, Ottawa, Ont. KIN 6N5, Ottawa University Campus
来源：
SURFACE SCIENCE | 1993年 / 292卷 / 03期
关键词：
D O I：
10.1016/0039-6028(93)90336-I
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Significant fractions of the scattered and recoil ions from single collisions of keV O+ ions with near surface atoms of amorphous silicon are found to be doubly and triply charged. Definite threshold energies are found for each multicharged ion, suggesting that they are produced in close binary collisions with individual surface atoms and that inner shell vacancies are produced by molecular orbital promotion. Characteristic velocities for the decay of O+, O2+, Si+, Si2+, and Si3+ in passing out through the surface are reported.
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页码：305 / 316
页数：12
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