THIN OXIDE FILM GROWTH ON FE(100)

被引：75

作者：

LEIBBRANDT, GWR ^{[1
]}

HOOGERS, G ^{[1
]}

HABRAKEN, FHPM ^{[1
]}

机构：

[1] UNIV UTRECHT, DEPT ATOM & INTERFACE PHYS, POB 80000, 3508 TA UTRECHT, NETHERLANDS

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.68.1947

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The process or oxide formation at various temperatures in the range 25-300-degrees-C on a well defined Fe(100) surface up to oxide thicknesses of 4 nm has been investigated using nuclear and electronic spectroscopies and ellipsometry. The conditions for the applicability of the oxidation theory of Fromhold and Cook are met and this theory is compared to the data. The several stages with their rate limiting steps are identified. In the regime where the oxidation rate is governed by the thermionic emission current across the metal-oxide interface the oxidation process is described in a quantitatively adequate manner.

引用

页码：1947 / 1950

页数：4

共 14 条

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