GROWTH OF HIGH-PURITY CDTE SINGLE-CRYSTALS BY VERTICAL ZONE-MELTING

被引:68
作者
TRIBOULET, R [1 ]
MARFAING, Y [1 ]
机构
[1] CNRS, LAB PHYS SOLIDES, 92 MEUDON, FRANCE
关键词
D O I
10.1149/1.2403674
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1260 / 1265
页数:6
相关论文
共 19 条
[1]   VAPOR GROWTH OF CADMIUM TELLURIDE [J].
AKUTAGAWA, W ;
ZANIO, K .
JOURNAL OF CRYSTAL GROWTH, 1971, 11 (03) :191-+
[2]  
ALEKSEENKO MV, 1970, SOV PHYS SEMICOND+, V4, P349
[3]  
Bell R. O., 1970, Physica Status Solidi A, V1, P375, DOI 10.1002/pssa.19700010303
[4]   PARTIAL PRESSURES IN CD-TE AND ZN-TE SYSTEMS [J].
BREBRICK, RF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (12) :2014-&
[5]  
Cornet A., 1970, Journal of Crystal Growth, V7, P329, DOI 10.1016/0022-0248(70)90059-X
[6]   SEALED SOLID METHOD FOR ZONE MELTING DECOMPOSABLE COMPOUNDS [J].
HEUMANN, FK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (04) :345-346
[7]   GROWING OF CDTE SINGLE CRYSTALS BY SUBLIMATION IN CD VAPOURS [J].
HOSCHL, P ;
KONAK, C .
CZECHOSLOVAK JOURNAL OF PHYSICS, 1963, 13 (10) :785-&
[8]  
KYLE NR, 1971, P INT S CDTE
[9]   HIGH-PURITY CDTE BY SEALED-INGOT ZONE REFINING [J].
LORENZ, MR ;
HALSTED, RE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (04) :343-344
[10]  
MARK P, 1965, RCA REV, V26, P461