1-D ARRAY IMPLEMENTATION OF THE RESISTIVELY-COUPLED SINGLE-ELECTRON TRANSISTOR

We have fabricated and tested the first version of the resistively-coupled single-electron transistor (R-SET) based on the correlated transfer of single electrons in ultrasmall junctions. In this version, a one-dimensional (1-D) array of 80 x 80 nm2 Al/Al(x)O(y)/Al junctions served as a resistor for transmission of the signal to the middle electrode of a pair of similar junctions. Of three tested R-SETs, all exhibited a real power gain, and one device showed the dc voltage gain of 0.85. The data have been found to be in a reasonable agreement with numerical simulations based on the "orthodox" theory of the correlated tunneling with an account of the superconductivity of aluminum electrodes.