MODULATED MOLECULAR-BEAM EPITAXY - A SUCCESSFUL ROUTE TOWARD HIGH-QUALITY HIGHLY STRAINED HETEROSTRUCTURES

InAs/GaAs highly strained short period superlattices exhibit clearly improved structural and optical properties when grown by modulated MBE at low temperature (350-degrees-C) instead of conventional MBE. This technique forces a layer by layer growth of the strained layers. Current descriptions of the growth mechanism are discussed, and an alternative model is proposed for it.