PROCESS DEPENDENCE OF INTERFACE STATE GENERATION DUE TO IRRADIATION AND HOT CARRIER STRESS IN RAPID THERMALLY NITRIDED THIN GATE OXIDES

被引：0
作者：
JOSHI, AB
LO, GQ
KWONG, DK
机构：
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 16期
关键词：
Interface states; Transport processes;
D O I：
10.1049/el:19900804
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A study of the effects of nitridation time and temperature on the interface state generation in MOS devices with thin rapid thermally nitrided gate oxides is reported. A different process dependence was observed for interface state generation caused by X-ray irradiation and hot carrier stress. The discrepancy is explained using the structural changes at the interface during nitridation and some of the earlier defect generation models. © 1990, The Institution of Electrical Engineers. All rights reserved.
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页码：1248 / 1249
页数：2
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