STRAIN DISTRIBUTION AND STRUCTURAL CHARACTERIZATION OF SHORT-PERIOD GAAS-GAP STRAINED SUPERLATTICES BY RAMAN AND X-RAY-SCATTERING

被引：10
作者：
RECIO, M
ARMELLES, G
RUIZ, A
MAZUELAS, A
BRIONES, F
机构：
[1] Centro Nacional de Microelectrónica, CSIC, 28006 Madrid, Serrano
来源：
SURFACE SCIENCE | 1990年 / 228卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(90)90276-E
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Raman scattering is used to study structural properties of strained-layer GaAsGaP short period superlattices grown on GaAs substrates. Different thicknesses of the constituent layers and also the effect of different types of buffer layers are studied. From the energy and width of the confined optical phonons observed, information about strain accomodation in the layers, strain relaxation and, in general, about structural quality is achieved. © 1990.
引用
收藏
页码：139 / 143
页数：5
相关论文
共 8 条
[1]   CONFINED OPTICAL PHONONS IN GAAS/GAP STRAINED LAYER SUPERLATTICES [J].
ARMELLES, G ;
RECIO, M ;
RUIZ, A ;
BRIONES, F .
SOLID STATE COMMUNICATIONS, 1989, 71 (06) :431-434
[2]  
BRIONES F, IN PRESS APPL PHYS A
[3]   RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J].
CERDEIRA, F ;
PINCZUK, A ;
BEAN, JC ;
BATLOGG, B ;
WILSON, BA .
APPLIED PHYSICS LETTERS, 1984, 45 (10) :1138-1140
[4]   INTERFACE ROUGHNESS AND THE DISPERSION OF CONFINED LO PHONONS IN GAAS/ALAS QUANTUM WELLS [J].
FASOL, G ;
TANAKA, M ;
SAKAKI, H ;
HORIKOSHI, Y .
PHYSICAL REVIEW B, 1988, 38 (09) :6056-6065
[5]  
JUSSERAND B, 1986, APPL PHYS LETT, V47, P301
[6]   Axial-strain effects on superlattice band structures [J].
O'Reilly, EP .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (02) :128-132
[7]  
RECIO M, IN PRESS JPN J APPL
[8]   LIGHT-HOLE CONDUCTION IN INGAAS/GAAS STRAINED-LAYER SUPERLATTICES [J].
SCHIRBER, JE ;
FRITZ, IJ ;
DAWSON, LR .
APPLIED PHYSICS LETTERS, 1985, 46 (02) :187-189
1