PHOTOCONDUCTIVITY OF CHROMIUM-DOPED GALLIUM ARSENIDE

被引:24
作者
BROOM, RF
机构
关键词
D O I
10.1063/1.1710156
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3483 / &
相关论文
共 13 条
[1]  
ALLEN JF, PRIVATE COMMUNICATIO
[2]   GALLIUM ARSENIDE AS A SEMI-INSULATOR [J].
ALLEN, JW .
NATURE, 1960, 187 (4735) :403-405
[3]   PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE COMPENSATED WITH DIFFUSED COPPER [J].
BLANC, J ;
MACDONALD, HE ;
BUBE, RH .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) :1666-&
[4]  
BUBE RH, 1965, PHOTOELECTRONIC MATE, pCH2
[5]   THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING [J].
CRONIN, GR ;
HAISTY, RW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :874-877
[6]  
GIBSON AF, 1965, PROGRESS SEMICOND ED, P158
[7]   PROPERTIES OF SEMI-INSULATING GAAS [J].
GOOCH, CH ;
HOLEMAN, BR ;
HILSUM, C .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2069-&
[8]   PREPARATION AND CHARACTERIZATION OF HIGH RESISTIVITY GAAS [J].
HAISTY, RW ;
STRATTON, R ;
MEHAL, EW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUL) :829-&
[9]  
HILSUM C, 1965, PROGRESS SEMICONDUCT, P158
[10]   PHOTOCONDUCTIVITY IN SEMI-INSULATING GALLIUM ARSENIDE [J].
HOLEMAN, BR ;
HILSUM, C .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 :19-24