MICROSTRUCTURAL AND ELECTRICAL PROPERTIES OF THIN PTSI FILMS AND THEIR RELATIONSHIPS TO DEPOSITION PARAMETERS

被引：42

作者：

ANDERSON, RM ^{[1
]}

REITH, TM ^{[1
]}

机构：

[1] IBM CORP, SYST PROD DIV, E FISHKILL FACIL, HOPEWELL JUNCTION, NY 12533 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 10期

关键词：

D O I：

10.1149/1.2134013

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1337 / 1347

页数：11

共 19 条

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[5] PLATINUM SILICIDE-ALUMINUM SCHOTTKY DIODE CHARACTERISTICS [J].

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APPLIED PHYSICS LETTERS, 1972, 21 (06) :256-&

[6]

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[7] PLANAR EPITAXIAL SILICON SCHOTTKY BARRIER DIODES [J].

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LEPSELTE.MP .

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[8] ORIENTED GROWTH OF INTERFACIAL PTSI LAYER OR BETWEEN PT AND SI [J].

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SHINODA, D ;

MUTA, H .

APPLIED PHYSICS LETTERS, 1967, 11 (03) :101-+

[9]

KOCH FB, 1970, J ELECTROCHEM SOC, V117, pC262

[10]

KOCH FB, 1970, OCT EL SOC M ATL CIT

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