EPITAXIAL-GROWTH OF COBALT FILMS ON CU(100) - A CRYSTALLOGRAPHIC LEED DETERMINATION

被引：102

作者：

CERDA, JR

DEANDRES, PL

CEBOLLADA, A

MIRANDA, R

NAVAS, E

SCHUSTER, P

SCHNEIDER, CM

KIRSCHNER, J

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS MAT CONDENSADA,E-28049 MADRID,SPAIN

[2] FREE UNIV BERLIN,INST EXPTL PHYS,W-1000 BERLIN 33,GERMANY

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1993年 / 5卷 / 14期

关键词：

D O I：

10.1088/0953-8984/5/14/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Epitaxial thin films of cobalt ranging from 1 ML Up to 10 ML have been grown on a Cu(100) substrate and characterized by LEED. The Cobalt is found to grow, adopting a slight tetragonal distortion of its high-temperature FCC phase. Further growth of 5 ML Cu on top of a 5 ML CO film results in an almost perfect Cu(100) surface.

引用

页码：2055 / 2062

页数：8

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