TAPERED WINDOWS IN SIO2, SI3N4, AND POLYSILICON LAYERS BY ION-IMPLANTATION

被引：4
作者：
GOTZLICH, J
RYSSEL, H
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 03期
关键词：
D O I：
10.1149/1.2127469
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：617 / 619
页数：3
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