EFFECTIVE BARRIER HEIGHT, CONDUCTION-BAND OFFSET, AND THE INFLUENCE OF P-TYPE DELTA DOPING AT HETEROJUNCTION INTERFACES - THE CASE OF THE INAS/GAAS INTERFACE

We demonstrate that the effective band discontinuity at an n-isotype heterojunction interface can be significantly modified by introducing p-type delta-doping close to the interface during molecular beam epitaxy growth. This is shown for the case of the relaxed InAs-GaAs interface where the band discontinuities with and without delta-doping have been measured by the I-V technique coupled with appropriate numerical modeling of the interface.