CRYSTALLIZATION OF AMORPHOUS TI-SI ALLOY THIN-FILMS - MICROSTRUCTURE AND RESISTIVITY

被引:24
作者
RAAIJMAKERS, IJMM
VANOMMEN, AH
READER, AH
机构
关键词
D O I
10.1063/1.343353
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3896 / 3906
页数:11
相关论文
共 48 条
[1]  
[Anonymous], 1961, XRAY METALLOGRAPHY
[2]   INSULATING, METALLIC, OR SEMIMETALLIC ELECTRONIC NATURE OF XSI2 COMPOUNDS - APPLICATION TO WSI2 [J].
BADOZ, PA ;
ROSENCHER, E ;
TORRES, J ;
FISHMAN, G .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :890-895
[3]   METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS [J].
BEYERS, R ;
SINCLAIR, R .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5240-5245
[4]   RESIDUAL RESISTIVITY OF COPPER AND SILVER ALLOYS - DEPENDENCE ON PERIODIC TABLE [J].
BLATT, FJ .
PHYSICAL REVIEW, 1957, 108 (02) :285-290
[5]   REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J].
CHOW, TP ;
STECKL, AJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1480-1497
[6]   1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].
CROWDER, BL ;
ZIRINSKY, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :369-371
[7]   TRANSPORT-PROPERTIES OF HEXAGONAL AND TETRAGONAL MOSI2 THIN-FILMS [J].
DEVRIES, JWC ;
VANOMMEN, AH .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) :749-752
[8]   STACKING-FAULTS IN WSI2 - RESISTIVITY EFFECTS [J].
DHEURLE, FM ;
LEGOUES, FK ;
JOSHI, R ;
SUNI, I .
APPLIED PHYSICS LETTERS, 1986, 48 (05) :332-334
[9]  
Goldschmidt H. J., 1967, INTERSTITIAL ALLOYS, DOI [10.1007/978-1-4899-5880-8, DOI 10.1007/978-1-4899-5880-8]
[10]   IOFFE-REGEL CRITERION AND RESISTIVITY OF METALS [J].
GURVITCH, M .
PHYSICAL REVIEW B, 1981, 24 (12) :7404-7407