A SELF-ALIGNED QUARTER-TO-HALF-MICROMETER BURIED-GATE GAAS JUNCTION FET

被引：2
|
作者：
LO, YH [1 ]
WANG, S [1 ]
MILLER, J [1 ]
MARS, D [1 ]
WANG, SY [1 ]
机构：
[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304
来源：
IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 01期
关键词：
D O I：
10.1109/EDL.1987.26542
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：36 / 38
页数：3
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