STUDY OF DEFECTS AND INTERFACES ON THE ATOMIC SCALE IN EPITAXIAL TIO2 THIN-FILMS ON SAPPHIRE

被引：24

作者：

GAO, Y

MERKLE, KL

CHANG, HL

ZHANG, TJ

LAM, DJ

机构：

[1] Materials Science Division, Argonne National Laboratory, Illinois

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1992年 / 65卷 / 05期

关键词：

D O I：

10.1080/01418619208201499

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

TiO2 thin films grown on (1120BAR) sapphire (alpha-Al2O3) at 800-degrees-C by the metallo-organic chemical vapour deposition technique have been characterized by transmission electron microscopy. The TiO2 thin films are single-crystal rutile. The epitaxial orientation relationship between the rutile thin films (R) and the sapphire substrates (S) is (101)[001]R parallel-to (1120BAR)[0001]S. Growth twins are commonly observed in the films with (101) twin planes and <101> twinning directions. The atomic structure of twin boundaries and TiO2-alpha-Al2O3 interfaces have been investigated by high-resolution electron microscopy. When the interfaces are viewed in the direction of [010]R-[0001]S, the interfaces appear structurally coherent along the direction of [101BAR]R-[1100BAR]S. The small misfit (0.5%) is accommodated at interface steps. In contrast, in the direction of [101BAR]R-[1100BAR]S, the interfaces are semicoherent. Growth mechanisms are discussed, based on information about the atomic structure of the interfaces.

引用

页码：1103 / 1125

页数：23

共 28 条

[1] FUNDAMENTAL ISSUES IN HETEROEPITAXY - A DEPARTMENT-OF-ENERGY, COUNCIL-ON-MATERIALS-SCIENCE PANEL REPORT [J].

BAUER, EG ;

DODSON, BW ;

EHRLICH, DJ ;

FELDMAN, LC ;

FLYNN, CP ;

GEIS, MW ;

HARBISON, JP ;

MATYI, RJ ;

PEERCY, PS ;

PETROFF, PM ;

PHILLIPS, JM ;

STRINGFELLOW, GB ;

ZANGWILL, A .

JOURNAL OF MATERIALS RESEARCH, 1990, 5 (04) :852-894

[2] TRANSMISSION ELECTRON-MICROSCOPE OBSERVATIONS OF SLIGHTLY REDUCED RUTILE [J].

BLANCHIN, MG ;

FAISANT, P ;

PICARD, C ;

EZZO, M ;

FONTAINE, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 60 (02) :357-364

[3]

Bursill L. A., 1972, PROG SOLID STATE CHE, V7, P177, DOI [DOI 10.1016/0079-6786(72)90008-8, 10.1016/0079-6786(72)90008-8]

[4]

BURSILL LA, 1982, P ROY SOC LOND A MAT, V2384, P135

[5]

Buseck P., 1988, HIGH RESOLUTION TRAN

[6]

CHANG HLM, 1990, MATER RES SOC SYMP P, V168, P343

[7] EPITAXIAL TIO2 AND VO2 FILMS PREPARED BY MOCVD [J].

CHANG, HLM ;

YOU, H ;

GUO, J ;

LAM, DJ .

APPLIED SURFACE SCIENCE, 1991, 48-9 :12-18

[8]

CHANG HLM, 1991, HIGH PERFORMANCE CER, P161

[9] THE MORPHOLOGY AND STRUCTURE OF CHEMICALLY VAPOR-DEPOSITED TI(C,N) COATINGS [J].

CHENG, DJ ;

SUN, WP ;

HON, MH .

THIN SOLID FILMS, 1987, 146 (01) :45-53

[10]

FITZGIBBONS ET, 1972, J ELECTROCHEM SOC, V119, P92

← 1 2 3 →