GERMANIUM DOPING OF GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY SOME THERMODYNAMIC ASPECTS

被引：14

作者：

HECKINGBOTTOM, R

DAVIES, GJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 50卷 / 03期

关键词：

D O I：

10.1016/0022-0248(80)90008-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：644 / 647

页数：4

共 16 条

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[8] SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GAAS .2. TIN-DOPING [J].

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[9] SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GALLIUM-ARSENIDE .3. GERMANIUM-DOPING [J].

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[10] GAAS, GAP, AND GAAS1-XPX FILMS DEPOSITED BY MOLECULAR-BEAM EPITAXY [J].

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