MICROSTRUCTURE OF INDIUM TIN OXIDE-FILMS PRODUCED BY THE DC SPUTTERING TECHNIQUE

被引：25
作者：
CHAUDHURI, S
BHATTACHARYYA, J
PAL, AK
机构：
[1] Indian Assoc for the Cultivation of, Science, Calcutta, India, Indian Assoc for the Cultivation of Science, Calcutta, India
来源：
THIN SOLID FILMS | 1987年 / 148卷 / 03期
关键词：
ELECTRIC PROPERTIES - METALLOGRAPHY - Microstructures - SPUTTERING;
D O I：
10.1016/0040-6090(87)90321-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of grain growth in indium tin oxide films deposited using the d. c. sputtering technique was studied as a function of annealing temperature. The results were correlated with the observed electrical properties.
引用
收藏
页码：279 / 284
页数：6
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