DOPING SUPERLATTICES (N-I-P-I CRYSTALS)

被引：173
作者：
DOHLER, GH
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1986年 / 22卷 / 09期
关键词：
D O I：
10.1109/JQE.1986.1073179
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1682 / 1695
页数：14
相关论文
共 64 条
[51]   ELEMENTARY EXCITATIONS IN SEMICONDUCTORS WITH N-I-P-I DOPING SUPER-LATTICES [J].
RUDEN, P .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :285-288
[52]   ELECTRONIC-STRUCTURE OF SEMICONDUCTORS WITH DOPING SUPER-LATTICES [J].
RUDEN, P ;
DOHLER, GH .
PHYSICAL REVIEW B, 1983, 27 (06) :3538-3546
[53]   TEMPERATURE-DEPENDENCE OF ELECTRONIC AND LATTICE PROPERTIES OF DOPING SUPERLATTICES IN IV-VI SEMICONDUCTORS [J].
RUDEN, PP ;
REINECKE, TL ;
CROWNE, F .
SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (03) :197-200
[54]  
RUDEN PP, 1985, 17TH P INT C PHYS SE, P535
[55]   GAAS SAWTOOTH SUPERLATTICE LASER EMITTING AT WAVELENGTHS LAMBDA GREATER-THAN 0.9 MU-M [J].
SCHUBERT, EF ;
FISCHER, A ;
HORIKOSHI, Y ;
PLOOG, K .
APPLIED PHYSICS LETTERS, 1985, 47 (03) :219-221
[56]   DISPERSION OF INDEX OF REFRACTION NEAR ABSORPTION EDGE OF SEMICONDUCTORS [J].
STERN, F .
PHYSICAL REVIEW, 1964, 133 (6A) :1653-+
[57]  
STORMER HL, 1979, I PHYS C SER, V43, P557
[58]   LUMINESCENCE OF N-I-P-I HETEROSTRUCTURES [J].
STREET, RA ;
DOHLER, GH ;
MILLER, JN ;
RUDEN, PP .
PHYSICAL REVIEW B, 1986, 33 (10) :7043-7047
[59]  
YAMAUCHI Y, 1984, JPN J APPL PHYS 2, V23, pL785, DOI 10.1143/JJAP.23.L785
[60]   DOPING SUPERLATTICES IN ORGANOMETALLIC VAPOR-PHASE EPITAXIAL INP [J].
YUAN, JS ;
GAL, M ;
TAYLOR, PC ;
STRINGFELLOW, GB .
APPLIED PHYSICS LETTERS, 1985, 47 (04) :405-407
1234567