DOPING SUPERLATTICES (N-I-P-I CRYSTALS)

被引:173
作者
DOHLER, GH
机构
关键词
D O I
10.1109/JQE.1986.1073179
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1682 / 1695
页数:14
相关论文
共 64 条
[1]   TUNABLE ELECTROLUMINESCENCE IN GAAS-DOPING MULTILAYER STRUCTURES [J].
ABSTREITER, G ;
KIRCHSTETTER, H ;
PLOOG, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :623-623
[2]  
ALLEN FG, UNPUB
[3]  
BAUSER E, UNPUB
[4]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[5]  
CAREY KW, 1986, I PHYS C SER, V79, P385
[6]   CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].
CASEY, HC ;
SELL, DD ;
WECHT, KW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257
[7]   ELECTRO-ABSORPTION BY STARK-EFFECT ON ROOM-TEMPERATURE EXCITONS IN GAAS/GAALAS MULTIPLE QUANTUM WELL STRUCTURES [J].
CHEMLA, DS ;
DAMEN, TC ;
MILLER, DAB ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1983, 42 (10) :864-866
[8]   GROWTH OF PERIODIC STRUCTURES BY MOLECULAR-BEAM METHOD [J].
CHO, AY .
APPLIED PHYSICS LETTERS, 1971, 19 (11) :467-&
[9]   HOT-WALL EPITAXY SYSTEM FOR THE GROWTH OF MULTILAYER IV-VI-COMPOUND HETEROSTRUCTURES [J].
CLEMENS, H ;
FANTNER, EJ ;
BAUER, G .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1983, 54 (06) :685-689
[10]   ULTRATHIN DOPING LAYERS AS A MODEL FOR 2D SYSTEMS [J].
DOHLER, GH .
SURFACE SCIENCE, 1978, 73 (01) :97-105