GENERATION-RECOMBINATION NOISE AND ITS INFLUENCE ON ENERGY RESOLUTION OF DIFFUSED SILICON P-N JUNCTION RADIATION DETECTORS

被引：2
作者：
DESHPANDE, RY
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS | 1967年 / 46卷 / 02期
关键词：
D O I：
10.1016/0029-554X(67)90080-8
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：255 / +
页数：1
相关论文
共 15 条
[1]   OBSERVATION OF DOUBLE INJECTION IN LONG P+PN+ DIFFUSED SILICON JUNCTIONS AND SOME RELATED EFFECTS [J].
DESHPANDE, RY .
SOLID-STATE ELECTRONICS, 1966, 9 (03) :265-+
[2]   TEMPERATURE DEPENDENCE OF CONDUCTIVITY OF SILICON-SILICON DIOXIDE INTERFACE [J].
DESHPANDE, RY .
SOLID-STATE ELECTRONICS, 1965, 8 (08) :619-+
[3]   EFFECT OF AMBIENTS ON CHARGE DENSITY AND CARRIER MOBILITY IN A SILICON-SILICON DIOXIDE INTERFACE [J].
DESHPANDE, RY .
SOLID-STATE ELECTRONICS, 1965, 8 (03) :313-+
[4]  
DESHPANDE RY, UNPUBLISHED
[5]   LEAKAGE CURRENT IN SEMICONDUCTOR JUNCTION RADIATION DETECTORS AND ITS INFLUENCE ON ENERGY-RESOLUTION CHARACTERISTICS [J].
GOULDING, FS ;
HANSEN, WL .
NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (02) :249-262
[6]   SURVEY OF APPLICATIONS + LIMITATIONS OF VARIOUS TYPES OF DETECTORS IN RADIATION ENERGY MEASUREMENT [J].
GOULDING, FS .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (03) :177-+
[7]  
GOULDING FS, 1965, UCRL16231, P27
[8]   ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].
HALL, RN .
PHYSICAL REVIEW, 1952, 87 (02) :387-387
[9]   OXIDE-PASSIVATED SILICON P-N JUNCTION PARTICLE DETECTORS [J].
HANSEN, WL ;
GOULDING, FS .
NUCLEAR INSTRUMENTS & METHODS, 1964, 29 (02) :345-347
[10]  
HANSEN WL, 1965, PRIVATE COMMUNICATIO
12