SPONTANEOUS ELECTRIC ABSORPTION IN CADMIUM TELLURIDE AND GALLIUM-ARSENIDE

被引：0

作者：

AKOPYAN, RM ^{[1
]}

BEROZASHVILI, YN ^{[1
]}

DUNDUA, AV ^{[1
]}

LORDKIPANIDZE, DS ^{[1
]}

机构：

[1] ACAD SCI GESSR, CYBERNETICS INST, TBILISI, GEORGIA

来源：

ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI | 1973年 / 65卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2007 / 2015

页数：9

共 23 条

[1] AFROMOVICH MA, 1969, 9 T MEZHD K FIZ POL, V1, P103
[2] AKOPYAN RM, 1972, 3 T VSES SOV FIZ SOE, V1, P82
[3] ELECTRIC-FIELD EFFECTS ON OPTICAL ABSORPTION NEAR THRESHOLDS IN SOLIDS
ASPNES, DE
[J]. PHYSICAL REVIEW, 1966, 147 (02): : 554 - &
[4] BAGAEV VS, 1969, PISMA ESKP TEOR FIZ, V9, P185
[5] BEROZASHVILI YN, 1973, FIZ TVERD TELA+, V15, P895
[6] BEROZASHVILI YN, 1972, PISMA ESKP TEOR FIZ, V15, P95
[7] Berozashvili Yu. N., 1971, Fizika Tverdogo Tela, V13, P3172
[8] INTERBAND OPTICAL TRANSITIONS IN DISORDERED SEMICONDUCTORS
BONCH-BRUEVICH, VL
[J]. PHYSICA STATUS SOLIDI, 1970, 42 (01): : 35 - +
[9] BONCHBRUEVICH VL, 1962, FIZ TVERD TELA, V4, P2660
[10] BONCHBRUEVICH VL, 1963, FIZ TVERD TELA, V5, P1853