SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL

[1] DETECTION OF EXCESS CRYSTALLINE AS AND SB IN III-V OXIDE INTERFACES BY RAMAN-SCATTERING [J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 768 - 770

[2] SILICIDE SCHOTTKY BARRIERS - ELEMENTAL DESCRIPTION [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (10) : 1059 - 1061

[3] FREEOUF JL, 1981, B AM PHYS SOC, V26, P285

[4] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612

[5] MCCALDIN JO, 1976, PHYS REV LETT, V36

[6] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A713 - +

[7] INVERSION-LAYERS ON INP [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1458 - 1461

[8] WORK FUNCTION OF ELEMENTS AND ITS PERIODICITY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4729 - 4733

[9] OKAMOTO K, 1981, APPL PHYS LETT, V15, P636

[10] Simplified and advanced Theory of the Boundary Layer Rectifiers [J]. ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10): : 539 - 592

[1] DETECTION OF EXCESS CRYSTALLINE AS AND SB IN III-V OXIDE INTERFACES BY RAMAN-SCATTERING [J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 768 - 770

[2] SILICIDE SCHOTTKY BARRIERS - ELEMENTAL DESCRIPTION [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (10) : 1059 - 1061

[3] FREEOUF JL, 1981, B AM PHYS SOC, V26, P285

[4] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612

[5] MCCALDIN JO, 1976, PHYS REV LETT, V36

[6] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A713 - +

[7] INVERSION-LAYERS ON INP [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1458 - 1461

[8] WORK FUNCTION OF ELEMENTS AND ITS PERIODICITY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4729 - 4733

[9] OKAMOTO K, 1981, APPL PHYS LETT, V15, P636

[10] Simplified and advanced Theory of the Boundary Layer Rectifiers [J]. ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10): : 539 - 592