VERTICAL-CAVITY SURFACE-EMITTING LASERS INTEGRATED ONTO SILICON SUBSTRATES BY PDGE CONTACTS

Vertical-cavity surface-emitting lasers (VCSELs) have been integrated onto an aluminium coated silicon substrate. The InGaAs top-emitting VCSELs were grown by molecular beam epitaxy and individual lasers were defined by high energy proton implantation. The substrate Wag removed by a new substrate removal process and the lasers were bonded to an al silicon substrate using a Pd/Ge/InSn contact. Threshold currents below 5.5mA and output powers of approximately 1mW were obtained for 40mum VCSELs bonded to Si.