GAXIN1-XAS MULTIPLE-QUANTUM-WIRE LASERS GROWN BY THE STRAIN-INDUCED LATERAL-LAYER ORDERING PROCESS

被引：47

作者：

CHOU, ST ^{[1
]}

CHENG, KY ^{[1
]}

CHOU, LJ ^{[1
]}

HSIEH, KC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MICROELECTR LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 17期

关键词：

D O I：

10.1063/1.114148

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Through the strain-induced lateral-layer ordering (SILO) process, long wavelength GaxIn1-xAs quantum wire (QWR) active region was formed in situ. The multiple quantum wire (MQWR) lasers showed anisotropic Jth and lasing spectra according to the orientation of the stripes. The Jth was greatly reduced for MQWR lasers with contact stripes aligned in the [110] direction, which is perpendicular to the MQWRs.

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页码：2220 / 2222

页数：3

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