Semiconductor pressure-pulse sensor

被引:4
作者
Stankevic, V
Simkevicius, C
机构
[1] Semiconductor Physics Institute, 2600 Vilnius
关键词
lithotripsy; pressure-pulse sensors; semiconductor sensors;
D O I
10.1016/0924-4247(95)01210-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The use of a semiconductor pressure sensor based on AlGaAs thin films to measure shock-wave pressures in lithotripters is described. The selection of an optimal thickness of encapsulant on the face of the pressure-sensitive chip enables a satisfactory durability and dynamic accuracy of the sensors to be obtained. Pressure sensors with a diameter of 1.3 mm have a sensitivity of 1.5 mV MPa(-1), a durability of about 2 x 10(4) pressure pulses of 40 MPa in amplitude and a rise time less than 0.1 mu s. The advantages and disadvantages of the proposed sensor as compared to pressure-pulse sensors of other types are discussed.
引用
收藏
页码:159 / 163
页数:5
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