A STUDY OF ELECTRONIC STATES NEAR THE INTERFACE IN FERROELECTRIC-SEMICONDUCTOR HETEROJUNCTION PREPARED BY RF SPUTTERING OF PBTIO3

被引：51
作者：
MATSUI, Y
OKUYAMA, M
NODA, M
HAMAKAWA, Y
机构：
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 28卷 / 03期
关键词：
D O I：
10.1007/BF00617981
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：161 / 166
页数：6
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