QUALITATIVE AND QUANTITATIVE ASSESSMENTS OF THE GROWTH OF (AL,GA) AS-GAAS HETEROSTRUCTURES BY INSITU ELLIPSOMETRY

被引：19
作者：
LAURENCE, G
HOTTIER, F
HALLAIS, J
机构：
来源：
REVUE DE PHYSIQUE APPLIQUEE | 1981年 / 16卷 / 10期
关键词：
D O I：
10.1051/rphysap:019810016010057900
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：579 / 589
页数：11
相关论文
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