RADIATION-INDUCED TRIVALENT SILICON DEFECT BUILDUP AT THE SI-SIO2 INTERFACE IN MOS STRUCTURES

被引：61

作者：

LENAHAN, PM ^{[1
]}

BROWER, KL ^{[1
]}

DRESSENDORFER, PV ^{[1
]}

JOHNSON, WC ^{[1
]}

机构：

[1] PRINCETON UNIV, DEPT ELECT ENGN & COMP SCI, PRINCETON, NJ 08544 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1981年 / 28卷 / 06期

关键词：

D O I：

10.1109/TNS.1981.4335683

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4105 / 4106

页数：2

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