LOW THRESHOLD GAINASP-INP LASERS WITH GOOD TEMPERATURE-DEPENDENCE GROWN BY LOW-PRESSURE MOVPE

被引：13
|
作者：
HIRTZ, JP
RAZEGHI, M
LARIVAIN, JP
HERSEE, S
DUCHEMIN, JP
机构：
来源：
ELECTRONICS LETTERS | 1981年 / 17卷 / 03期
关键词：
D O I：
10.1049/el:19810081
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：113 / 114
页数：2
相关论文
共 50 条
  • [21] LOW-THRESHOLD OPERATION OF 1.5 MU-M BURIED-HETEROSTRUCTURE DFB LASERS GROWN ENTIRELY BY LOW-PRESSURE MOVPE
    ITAYA, Y
    OISHI, M
    NAKAO, M
    SATO, K
    KONDO, Y
    IMAMURA, Y
    ELECTRONICS LETTERS, 1987, 23 (05) : 193 - 194
  • [22] ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.23-MU-M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
    RAZEGHI, M
    HIRTZ, JP
    HIRTZ, P
    LARIVAIN, JP
    BONDEAU, R
    DECREMOUX, B
    DUCHEMIN, JP
    ELECTRONICS LETTERS, 1981, 17 (17) : 597 - 598
  • [23] SEMIINSULATING INP GROWN BY LOW-PRESSURE MOCVD
    HESS, KL
    ZEHR, SW
    CHENG, WH
    PERRACHIONE, D
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (02) : 127 - 131
  • [24] SEMIINSULATING INP GROWN BY LOW-PRESSURE MOCVD
    HESS, KL
    ZEHR, SW
    CHENG, WH
    PERRACHIONE, D
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 294 - 294
  • [25] Optical properties of GaInAs/InP multi-quantum wells grown by low-pressure MOVPE
    Laurenti, J.P.
    Camassel, J.
    Reynes, B.
    Grutzmacher, D.
    Wolter, K.
    Kurz, H.
    Semiconductor Science and Technology, 1990, 5 (03): : 222 - 228
  • [26] SURFACE-EMITTING GAINASP-INP LASER WITH LOW THRESHOLD CURRENT AND HIGH-EFFICIENCY
    LIAU, ZL
    WALPOLE, JN
    APPLIED PHYSICS LETTERS, 1985, 46 (02) : 115 - 117
  • [27] THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT OF CHEMICAL BEAM EPITAXY-GROWN INGAAS-INP LASERS
    REES, P
    BLOOD, P
    VANHOMMERIG, MJH
    DAVIES, GJ
    SKEVINGTON, PJ
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) : 1804 - 1807
  • [28] TEMPERATURE-DEPENDENCE OF THE THRESHOLD OF GALNASP/INP SURFACE EMITTING JUNCTION LASERS
    UCHIYAMA, S
    IGA, K
    APPLIED PHYSICS LETTERS, 1985, 46 (10) : 930 - 932
  • [29] LOW THRESHOLD CURRENT-DENSITY (100) GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR WAVELENGTH 1.3-MU-M
    ITAYA, Y
    SUEMATSU, Y
    KATAYAMA, S
    KISHINO, K
    ARAI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (09) : 1795 - 1805
  • [30] OPTICAL-PROPERTIES OF GAINAS INP MULTI-QUANTUM-WELLS GROWN BY LOW-PRESSURE MOVPE
    LAURENTI, JP
    CAMASSEL, J
    REYNES, B
    GRUTZMACHER, D
    WOLTER, K
    KURZ, H
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (03) : 222 - 228
12345