LOW THRESHOLD GAINASP-INP LASERS WITH GOOD TEMPERATURE-DEPENDENCE GROWN BY LOW-PRESSURE MOVPE

被引：13
作者：
HIRTZ, JP
RAZEGHI, M
LARIVAIN, JP
HERSEE, S
DUCHEMIN, JP
机构：
来源：
ELECTRONICS LETTERS | 1981年 / 17卷 / 03期
关键词：
D O I：
10.1049/el:19810081
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：113 / 114
页数：2
相关论文
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[9]  
HIRTZ JP, UNPUBLISHED
[10]   ROOM-TEMPERATURE OPERATION OF LATTICE-MATCHED INP-GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MBE [J].
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