CALCULATION OF THE GROWTH VELOCITY FOR LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GAAS CRYSTALS

被引：0

作者：

KLIMOVITSKY, IK ^{[1
]}

机构：

[1] GTE LABS INC,WALTHAM,MA 02254

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 132卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(93)90091-A

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth velocity of GaAs single crystals grown with the high pressure liquid encapsulated Czochralski (HP-LEC) technique was calculated and plotted for the first time in almost a century's history of the crystal growth. The experimental data confirmed that during the run, this velocity varied from the pulling rate by 50%.

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页码：614 / 616

页数：3

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