DONOR BOUND-EXCITON EXCITED-STATES IN ZINC SELENIDE

被引:196
作者
DEAN, PJ [1 ]
HERBERT, DC [1 ]
WERKHOVEN, CJ [1 ]
FITZPATRICK, BJ [1 ]
BHARGAVA, RN [1 ]
机构
[1] PHILIPS LABS,BRIARCLIFF MANOR,NY 10510
来源
PHYSICAL REVIEW B | 1981年 / 23卷 / 10期
关键词
D O I
10.1103/PhysRevB.23.4888
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4888 / 4901
页数:14
相关论文
共 29 条
[1]   ENERGY LEVELS OF DIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS [J].
BALDERESCHI, A ;
LIPARI, NO .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :439-+
[2]   SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J].
BALDERESCHI, A ;
LIPARI, NO .
PHYSICAL REVIEW B, 1973, 8 (06) :2697-2709
[3]   DONOR-ACCEPTOR PAIR BANDS IN ZNSE [J].
BHARGAVA, RN ;
SEYMOUR, RJ ;
FITZPATRICK, BJ ;
HERKO, SP .
PHYSICAL REVIEW B, 1979, 20 (06) :2407-2419
[4]  
CHO K, 1979, TOPICS CURRENT PHYSI, V14, P67
[5]   EXCITON EXCITATION SPECTRA IN CDS [J].
CONRADI, J ;
HAERING, RR .
PHYSICAL REVIEW, 1969, 185 (03) :1088-+
[6]   ZEEMAN EFFECT AND CRYSTAL-FIELD SPLITTING OF EXCITONS BOUND TO ISOELECTRONIC BISMUTH IN GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
FAULKNER, RA .
PHYSICAL REVIEW, 1969, 185 (03) :1064-&
[8]   COPPER, THE DOMINANT ACCEPTOR IN REFINED, UNDOPED ZINC TELLURIDE [J].
DEAN, PJ .
JOURNAL OF LUMINESCENCE, 1979, 21 (01) :75-83
[9]   ENERGY-DEPENDENT CAPTURE CROSS SECTIONS AND PHOTOLUMINESCENCE EXCITATION SPECTRA OF GALLIUM PHOSPHIDE ABOVE THRESHOLD FOR INTRINSIC INTERBAND ABSORPTION [J].
DEAN, PJ .
PHYSICAL REVIEW, 1968, 168 (03) :889-+
[10]  
DEAN PJ, J PHYS C