VARIABLE-RANGE HOPPING IN A SILICON INVERSION LAYER

[1] LOCALIZED STATES IN INVERTED SILICON-SILICON DIOXIDE INTERFACES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (20): : L379 - L381

[2] ELECTRICAL-CONDUCTION IN HEAVILY DOPED GERMANIUM [J]. PHILOSOPHICAL MAGAZINE, 1972, 26 (04): : 1027 - &

[3] MAGNETICALLY INDUCED SPIN-REVERSAL TRANSITIONS IN IMPURITY HOP CONDUCTION IN N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1968, 169 (03): : 593 - +

[4] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +

[5] GODBER G, UNPUBLISHED

[6] VARIABLE RANGE HOPPING IN A NONUNIFORM DENSITY OF STATES [J]. PHILOSOPHICAL MAGAZINE, 1972, 26 (04): : 1043 - &

[7] MOTT N, 1973, ELECTRON POWER, V19, P321, DOI 10.1049/ep.1973.0382

[8] MOTT NF, 1972, PHIL MAG, V26, P1051

[9] ROSS EC, 1969, RCA REV, V30, P366

[10] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &

[1] LOCALIZED STATES IN INVERTED SILICON-SILICON DIOXIDE INTERFACES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (20): : L379 - L381

[2] ELECTRICAL-CONDUCTION IN HEAVILY DOPED GERMANIUM [J]. PHILOSOPHICAL MAGAZINE, 1972, 26 (04): : 1027 - &

[3] MAGNETICALLY INDUCED SPIN-REVERSAL TRANSITIONS IN IMPURITY HOP CONDUCTION IN N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1968, 169 (03): : 593 - +

[4] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +

[5] GODBER G, UNPUBLISHED

[6] VARIABLE RANGE HOPPING IN A NONUNIFORM DENSITY OF STATES [J]. PHILOSOPHICAL MAGAZINE, 1972, 26 (04): : 1043 - &

[7] MOTT N, 1973, ELECTRON POWER, V19, P321, DOI 10.1049/ep.1973.0382

[8] MOTT NF, 1972, PHIL MAG, V26, P1051

[9] ROSS EC, 1969, RCA REV, V30, P366

[10] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &