LATTICE-DEFECTS IN AS-IMPLANTED AND CW ND-YAG LASER-ANNEALED SILICON

被引:10
作者
ISHIDA, K
OKABAYASHI, H
YOSHIDA, M
机构
关键词
D O I
10.1063/1.91814
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:175 / 177
页数:3
相关论文
共 14 条
  • [1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON
    AUSTON, DH
    GOLOVCHENKO, JA
    SMITH, PR
    SURKO, CM
    VENKATESAN, TNC
    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 539 - 541
  • [2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING
    AUSTON, DH
    SURKO, CM
    VENKATESAN, TNC
    SLUSHER, RE
    GOLOVCHENKO, JA
    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440
  • [3] STUDY OF THE MECHANISM OF CW LASER ANNEALING OF ARSENIC-IMPLANTED SILICON
    GAT, A
    LIETOILA, A
    GIBBONS, JF
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2926 - 2929
  • [4] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON
    GAT, A
    GIBBONS, JF
    MAGEE, TJ
    PENG, J
    DELINE, VR
    WILLIAMS, P
    EVANS, CA
    [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278
  • [5] USE OF A SCANNING CW KR LASER TO OBTAIN DIFFUSION-FREE ANNEALING OF B-IMPLANTED SILICON
    GAT, A
    GIBBONS, JF
    MAGEE, TJ
    PENG, J
    WILLIAMS, P
    DELINE, V
    EVANS, CA
    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 389 - 391
  • [6] COMPARATIVE-STUDY OF LASER AND THERMAL ANNEALING OF BORON-IMPLANTED SILICON
    NARAYAN, J
    YOUNG, RT
    WHITE, CW
    [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3912 - 3917
  • [7] SIO2 ANTIREFLECTION COATING EFFECT ON CW LASER ANNEALING OF ION-IMPLANTED SI
    OKABAYASHI, H
    YOSHIDA, M
    ISHIDA, K
    YAMANE, T
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (03) : 202 - 203
  • [8] ROZGONYI GA, 1975, LASER SOLID INTERACT, P457
  • [9] OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON
    SANDERS, IR
    DOBSON, PS
    [J]. PHILOSOPHICAL MAGAZINE, 1969, 20 (167): : 881 - &
  • [10] SHRINKAGE AND ANNIHILATION OF STACKING-FAULTS IN SILICON
    SUGITA, Y
    SHIMIZU, H
    YOSHINAKA, A
    AOSHIMA, T
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 44 - 46