The epitaxial growth of gallium arsenide using triethylarsine

被引：2

作者：

Maeda, T. ^{[1
]}

Hata, M. ^{[1
]}

Zempo, Y. ^{[1
]}

Fukuhara, N. ^{[1
]}

Matsuda, Y. ^{[1
]}

Sawara, K. ^{[2
]}

机构：

[1] Sumitomo Chem Co Ltd, Takatsuki Res Labs, 10-1,2 Chome, Takatsuki, Osaka 569, Japan

[2] Sumitomo Chem Co Ltd, Ehime Res Labs, Takatsuki, Osaka 569, Japan

来源：

APPLIED ORGANOMETALLIC CHEMISTRY | 1989年 / 3卷 / 02期

关键词：

Epitaxial; gallium arsenide; decomposition; triethylarsine; semiconductor;

D O I：

10.1002/aoc.590030206

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

The thermal decomposition of triethylarsine (TEAS) has been studied. It decomposes at a lower temperature than arsine (AsH3). The decomposition proceeds via a radical process at a temperature above 700 degrees C. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good morphology was obtained, but the layer was found to contain a considerable amount of carbon impurity originating from TEAs. The use of TEAs with 10% AsH3 or with 20% ammonia (NH3) apparently improves the quality of GaAs layer. A possible scheme for reducing carbon incorporation is discussed.

引用

页码：151 / 156

页数：6

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