The epitaxial growth of gallium arsenide using triethylarsine

被引：2
作者：
Maeda, T. [1 ]
Hata, M. [1 ]
Zempo, Y. [1 ]
Fukuhara, N. [1 ]
Matsuda, Y. [1 ]
Sawara, K. [2 ]
机构：
[1] Sumitomo Chem Co Ltd, Takatsuki Res Labs, 10-1,2 Chome, Takatsuki, Osaka 569, Japan
[2] Sumitomo Chem Co Ltd, Ehime Res Labs, Takatsuki, Osaka 569, Japan
来源：
APPLIED ORGANOMETALLIC CHEMISTRY | 1989年 / 3卷 / 02期
关键词：
Epitaxial; gallium arsenide; decomposition; triethylarsine; semiconductor;
D O I：
10.1002/aoc.590030206
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
The thermal decomposition of triethylarsine (TEAS) has been studied. It decomposes at a lower temperature than arsine (AsH3). The decomposition proceeds via a radical process at a temperature above 700 degrees C. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good morphology was obtained, but the layer was found to contain a considerable amount of carbon impurity originating from TEAs. The use of TEAs with 10% AsH3 or with 20% ammonia (NH3) apparently improves the quality of GaAs layer. A possible scheme for reducing carbon incorporation is discussed.
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页码：151 / 156
页数：6
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