BISTABILITY IN AN ALAS-GAAS-INGAAS VERTICAL-CAVITY SURFACE-EMITTING LASER

被引：15

作者：

DEPPE, DG

LEI, C

ROGERS, TJ

STREETMAN, BG

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 23期

关键词：

D O I：

10.1063/1.104811

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented demonstrating bistability in the current versus voltage and light versus current characteristics of a quantum well vertical-cavity surface-emitting laser. The laser structures are grown using molecular beam epitaxy, and use an AlAs/GaAs Bragg reflector for the n-side mirror, and a combination of AlAs/GaAs and either ZnSe/CaF2 or Si/SiO2 quarter-wave dielectric layers for the p-side mirror. Regrowth of molecular beam epitaxial layers is used for current funneling into the device active region. Light emission is measured from the epitaxial side of the device, and threshold currents range from 2 to 4 mA. The bistability stems from switching in a parasitic pnpn structure triggered by lasing in the vertical-cavity laser, with the observed hysteresis width influenced by leakage current around the device active region.

引用

页码：2616 / 2618

页数：3

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