HOT ISOSTATIC PRESSING OF SINTERED SILICON-NITRIDE

被引：6

作者：

KIM, SS ^{[1
]}

BAIK, SG ^{[1
]}

机构：

[1] RES INST IND SCI & TECHNOL,INORGAN MAT LAB,POHANG 790330,SOUTH KOREA

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1991年 / 74卷 / 07期

关键词：

SILICON NITRIDE; HOT ISOSTATIC PRESSING; DENSIFICATION; NITROGEN; PORES;

D O I：

10.1111/j.1151-2916.1991.tb07175.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Pressureless-sintered silicon nitride with varying additives was hot isostatic pressed under 150 MPa of nitrogen at 1800-degrees-C. Moderate increases in densities were observed when sintered densities exceeded 90% of theoretical. However, density changes became insignificant as the amount of additives exceeded 12 wt%; moreover, density reduction was occasionally observed. Microstructural analysis, after the silicon nitride was reannealed at 1650-degrees-C under 0.1 MPa of nitrogen, revealed that intergranular glass was supersaturated with nitrogen and "bloated" as a result of nitrogen evolution. This result suggested that the effectiveness of container-free hot isostatic pressing of silicon nitride was severely limited by enhanced solubility of nitrogen gas in the glassy phase under high pressure.

引用

页码：1735 / 1738

页数：4