HOT ISOSTATIC PRESSING OF SINTERED SILICON-NITRIDE

被引:6
作者
KIM, SS [1 ]
BAIK, SG [1 ]
机构
[1] RES INST IND SCI & TECHNOL,INORGAN MAT LAB,POHANG 790330,SOUTH KOREA
关键词
SILICON NITRIDE; HOT ISOSTATIC PRESSING; DENSIFICATION; NITROGEN; PORES;
D O I
10.1111/j.1151-2916.1991.tb07175.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Pressureless-sintered silicon nitride with varying additives was hot isostatic pressed under 150 MPa of nitrogen at 1800-degrees-C. Moderate increases in densities were observed when sintered densities exceeded 90% of theoretical. However, density changes became insignificant as the amount of additives exceeded 12 wt%; moreover, density reduction was occasionally observed. Microstructural analysis, after the silicon nitride was reannealed at 1650-degrees-C under 0.1 MPa of nitrogen, revealed that intergranular glass was supersaturated with nitrogen and "bloated" as a result of nitrogen evolution. This result suggested that the effectiveness of container-free hot isostatic pressing of silicon nitride was severely limited by enhanced solubility of nitrogen gas in the glassy phase under high pressure.
引用
收藏
页码:1735 / 1738
页数:4
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