BEVEL CROSS SECTIONING OF ULTRATHIN (- 100 A) III-V-SEMICONDUCTOR LAYERS

被引：31
作者：
HOLONYAK, N
VOJAK, BA
KOLBAS, RM
DUPUIS, RD
DAPKUS, PD
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] ROCKWELL INT,DIV DEVICES,ELECTR RES CTR,ANAHEIM,CA 92803
来源：
SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 04期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0038-1101(79)90097-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A method is described for extending the use of bevel cross sectioning of semiconductor layers from the usual limits of 500-1000 to 80-100 Å. The modified bevel cross sectioning described is used to view the 11 layers (6 GaAs and 5 AlGaAs, each ∼ 120 A ̊) and the 7 layers (4 GaAs and 3 AlGaAs, each ∼ 80 A ̊) of two multiple quantum-well AlxGa1-xAsGaAs (laser) heterostructures grown by metalorganic chemical vapor deposition (MO-CVD). © 1979.
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页码：431 / &
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