TUNNELING AND DARK CURRENTS IN HGCDTE PHOTODIODES

被引：93

作者：

NEMIROVSKY, Y

ROSENFELD, D

ADAR, R

KORNFELD, A

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.576215

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：528 / 535

页数：8

相关论文

共 18 条

[1] BULK TUNNELING CONTRIBUTION TO THE REVERSE BREAKDOWN CHARACTERISTICS OF INSB GATE CONTROLLED DIODES
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[8] BAND-TO-BAND TUNNEL PROCESSES IN HGCDTE - COMPARISON OF EXPERIMENTAL AND THEORETICAL-STUDIES
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