EQUILIBRIUM STRUCTURES OF SI(100) STEPPED SURFACES

被引:172
作者
POON, TW
YIP, S
HO, PS
ABRAHAM, FF
机构
[1] MIT,DEPT NUCL ENGN,CAMBRIDGE,MA 02139
[2] IBM CORP,ALMADEN RES CTR,DIV RES,SAN JOSE,CA 95120
关键词
D O I
10.1103/PhysRevLett.65.2161
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Atomistic calculations using the Stillinger-Weber interatomic potential show that stress relaxation can lower the energy of a Si(100) stepped surface below that of the flat surface. Two types of elastic interactions are identified: One is due to stress anisotropy which occurs only on single-stepped surfaces and has a logarithmic dependence on ledge separation l; the other is associated with ledge rebonding, present in both single- and double-stepped surfaces, and has a variation of l-2. On the vicinal Si(001), single-layer ledges are predicted to be favored over double-layer ledges at low miscut angles with the crossover occurring at about 1°at zero temperature, and at 3°at 500 K, in agreement with experiment. © 1990 The American Physical Society.
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收藏
页码:2161 / 2164
页数:4
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