NICKEL SILICIDE FORMATION IN ELECTROLESS PLATED FILMS ON SILICON - LOW-TEMPERATURE GROWTH OF NI3SI2, MORPHOLOGY AND ELECTRICAL-RESISTANCE

被引：4
作者：
NAYAK, BB
SINGH, SK
ACHARYA, BS
机构：
来源：
THIN SOLID FILMS | 1989年 / 171卷 / 02期
关键词：
D O I：
10.1016/0040-6090(89)90635-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：277 / 290
页数：14
相关论文
共 26 条
[1]   TANTALUM SILICIDE FILMS DEPOSITED BY DC SPUTTERING [J].
ANGILELLO, J ;
BAGLIN, JEE ;
CARDONE, F ;
DEMPSEY, JJ ;
DHEURLE, FM ;
IRENE, EA ;
MACINNES, R ;
PETERSSON, CS ;
SAVOY, R ;
SEGMULLER, AP ;
TIERNEY, E .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :59-93
[2]  
BARIN I, 1977, THERMOCHEMICAL PROPE, P480
[3]  
Dean J.A., 1985, LANGES HDB CHEM, V13td
[4]   FORMATION OF THIN-FILMS OF NISI - METASTABLE STRUCTURE, DIFFUSION MECHANISMS IN INTERMETALLIC COMPOUNDS [J].
DHEURLE, F ;
PETERSSON, CS ;
BAGLIN, JEE ;
LAPLACA, SJ ;
WONG, CY .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) :4208-4218
[5]   REACTION OF SILICON WITH FILMS OF CO-NI ALLOYS - PHASE-SEPARATION OF THE MONOSILICIDES AND NUCLEATION OF THE DISILICIDES [J].
DHEURLE, FM ;
ANFITEATRO, DD ;
DELINE, VR ;
FINSTAD, TG .
THIN SOLID FILMS, 1985, 128 (1-2) :107-124
[6]   FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS [J].
DHEURLE, FM ;
PETERSSON, CS .
THIN SOLID FILMS, 1985, 128 (3-4) :283-297
[7]  
DHEURLE FM, 1982, VLSI SCI TECHNOLOGY, P204
[8]   THE FORMATION OF DISILICIDES FROM BILAYERS OF NI/CO AND CO/NI ON SILICON - PHASE-SEPARATION AND SOLID-SOLUTION [J].
FINSTAD, TG ;
ANFITEATRO, DD ;
DELINE, VR ;
DHEURLE, FM ;
GAS, P ;
MORUZZI, VL ;
SCHWARZ, K ;
TERSOFF, J .
THIN SOLID FILMS, 1986, 135 (02) :229-243
[9]   FORMATION OF INTERMEDIATE PHASES, NI3SI2 AND PT6SI5 - NUCLEATION, IDENTIFICATION, AND RESISTIVITY [J].
GAS, P ;
DHEURLE, FM ;
LEGOUES, FK ;
LAPLACA, SJ .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) :3458-3466
[10]  
KUBASCHEWSKI O, 1967, METALLURGICAL THERMO, P340
123