CORRELATION OF ANISOTROPIC STRAIN RELAXATION WITH SUBSTRATE MISORIENTATION DIRECTION AT INGAAS/GAAS(001) INTERFACES

被引：40

作者：

GOLDMAN, RS ^{[1
]}

WIEDER, HH ^{[1
]}

KAVANAGH, KL ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO, DEPT ELECT & COMP ENGN, LA JOLLA, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 03期

关键词：

D O I：

10.1063/1.115439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effects of substrate misorientation towards (111)A, (111)B, and (011) on asymmetries in the strain relaxation of InxGa1-x,As, grown on (001) GaAs substrates by molecular beam epitaxy. For epilayers grown under conditions of two-dimensional growth, we find large anisotropies in bulk strain relaxation and epilayer rotation about an in-plane axis (epilayer tilt) in proportion to the degree of (111)A misorientation. The residual strain asymmetry is largest for the (111)A misoriented substrate (>50%) and smallest for the (111)B misoriented substrate (<15%). At higher growth temperatures, the bulk strain relaxation becomes isotropic while the epilayer tilt remains sensitive to the offcut direction. At all temperatures, a preference for epilayer tilt toward the [110] direction for (011) misorientations is observed. (C) 1995 American Institute of Physics.

引用

页码：344 / 346

页数：3

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