OPTICAL-PROPERTIES OF SILICON-NITRIDE FILMS DEPOSITED BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION

被引：256
作者：
DESHPANDE, SV
GULARI, E
BROWN, SW
RAND, SC
机构：
[1] UNIV MICHIGAN, CTR DISPLAY TECHNOL & MFG, ANN ARBOR, MI 48109 USA
[2] UNIV MICHIGAN, APPL PHYS PROGRAM, ANN ARBOR, MI 48109 USA
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 12期
关键词：
D O I：
10.1063/1.359062
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Silicon nitride films were deposited at low temperatures (245-370 °C) and high deposition rates (500-1700 Å/min) by hot filament assisted chemical vapor deposition (HFCVD). Optical properties of these amorphous silicon nitride thin films have been extensively characterized by absorption, photoluminescence (PL), photoluminescence excitation, and electroluminescence measurements. The optical band gap of the films was varied between 2.43 and 4.74 eV by adjusting the flow rate of the disilane source gas. Three broad peaks at 1.8, 2.4, and 3.0 eV were observed in the PL spectra from these films. A simple qualitative model based on nitrogen and silicon dangling bonds adequately explains the observed PL features. The photoluminescence intensity observed in these films was 8-10 times stronger than films deposited by plasma enhanced chemical vapor deposition, under similar conditions. The high deposition rates obtained by HFCVD is believed to introduce a large number of these optically active defects. © 1995 American Institute of Physics.
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页码：6534 / 6541
页数：8
相关论文
共 37 条
[1]   PHOTOLUMINESCENCE PROPERTIES OF A-SINX - H-ALLOYS [J].
AUSTIN, IG ;
JACKSON, WA ;
SEARLE, TM ;
BHAT, PK ;
GIBSON, RA .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (03) :271-288
[2]   SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J].
BEAN, KE ;
GLEIM, PS ;
YEAKLEY, RL ;
RUNYAN, WR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :733-&
[3]   AMORPHOUS VISIBLE-LIGHT THIN-FILM LIGHT-EMITTING DIODE HAVING A-SIN-H AS A LUMINESCENT LAYER [J].
BOONKOSUM, W ;
KRUANGAM, D ;
PANYAKEOW, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (04) :1534-1538
[4]   ELECTRON-CYCLOTRON RESONANCE PLASMA DEPOSITION OF SILICON-NITRIDE - EFFECT OF VERY LOW RF SUBSTRATE BIAS [J].
BUCKLE, KA ;
RODGERS, J ;
PASTOR, K ;
CONSTANTINE, C ;
JOHNSON, D .
APPLIED PHYSICS LETTERS, 1992, 60 (21) :2601-2603
[5]  
CHEN D, 1992, MATER RES SOC S P, V258, P661
[6]   FILAMENT ACTIVATED CHEMICAL-VAPOR-DEPOSITION OF BORON-CARBIDE COATINGS [J].
DESHPANDE, SV ;
GULARI, E ;
HARRIS, SJ ;
WEINER, AM .
APPLIED PHYSICS LETTERS, 1994, 65 (14) :1757-1759
[7]   HOT FILAMENT ASSISTED DEPOSITION OF SILICON-NITRIDE THIN-FILMS [J].
DESHPANDE, SV ;
DUPUIE, JL ;
GULARI, E .
APPLIED PHYSICS LETTERS, 1992, 61 (12) :1420-1422
[8]  
DESHPANDE SV, 1994, MATER RES SOC SYMP P, V325, P177
[9]  
DESHPANDE SV, 1994, MATER RES SOC SYMP P, V327, P115
[10]   HOT FILAMENT ENHANCED CHEMICAL VAPOR-DEPOSITION OF ALN THIN-FILMS [J].
DUPUIE, JL ;
GULARI, E .
APPLIED PHYSICS LETTERS, 1991, 59 (05) :549-551
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