A LOW-TEMPERATURE FABRICATION PROCESS OF POLYCRYSTALLINE SILICON-SILICON P+-N JUNCTION DIODE

被引：0
作者：
WU, CMM
YANG, ES
机构：
来源：
APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 10期
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D O I：
10.1063/1.92141
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：813 / 814
页数：2
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