HIGH-TEMPERATURE OPERATION OF INGAASP INP HETEROSTRUCTURE LASERS AND INTEGRATED BACK FACET MONITORS FABRICATED BY CHEMICALLY ASSISTED ION-BEAM ETCHING

被引：22
作者：
DZIOBA, S
JATAR, S
HERAK, TV
COOK, JPD
MARKS, J
JONES, T
SHEPHERD, FR
机构：
[1] Bell-Northern Research Ltd., Station C., Ottawa, Ont. K1Y 4H7
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 20期
关键词：
D O I：
10.1063/1.109327
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Chemically assisted ion beam etching (CAIBE) has been used to etch InGaAsP/InP ridge laser facets. Smooth, vertical facets 4 mum deep have been etched using Ar/Cl2 CAIBE with a beam voltage of 440 V and a beam current density of 0.08 mA/cm2. Room temperature and high temperature (85-degrees-C) L-I characteristics and device performance have been evaluated, as well as the performance of integrated back facet monitors. Output powers of 9.5 mW from the laser and a monitor current of 3.75 mA have been obtained.
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页码：2486 / 2488
页数：3
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